Beamline: BXDS-LE
Contact: Beatriz Diaz Moreno
Optimized for investigating transformations of thin films and multilayer structures during rapid thermal treatments in-situ.
Samples can be rapidly heated to 1273 K under vacuum or ultra high purity gas such as He or N2.
XRD with linear strip detector. 640 pixels of 125 µm x 8 mm, a maximum count rate of 105 Hz per pixel, and 30 ms minimum readout time. In-situ roughness and 4-point resistance probes.
Robotic sample loading, automated, remote access is default. Load 96 samples at a time.
Now operates at 8 keV or XX.X keV using the Si (111) and Si (311) crystals, respectively.